Design and calculate of wide-band mixer semiconductor on 130 nm CMOS technology

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Authors

  • Phan Hong Minh (Corresponding Author) Institute of Electronics, Academy of Military Science and Technology
  • Nguyen Thi Thuy Faculty of Electronics and Telecommunications, Electric Power University
  • Nguyen Truong Son Military Region 2

DOI:

https://doi.org/10.54939/1859-1043.j.mst.FEE.2024.149-156

Keywords:

Mixer; CMOS Gilbert Cell Mixer; PDK Skywater 130nm.

Abstract

 The article introduces a method of calculating and designing the parameters of the GilbertCell Mixer, which is made of CMOS components using the PDK Skywater 130nm process. The mixer is calculated, designed in principle and layout to work in the frequency range of 8 MHz ÷ 30 MHz, from which it is possible to evaluate the working parameters, limit the risks in the manufacturing process and apply them in practice in the field of designing specialized RF chips for radio communication devices using CMOS technology.

References

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[6]. Dr. Satyanarayana R.V.S., Subramanyam Avvaru, “Design and Optimization of Double Balanced Gilbert Cell Mixer in 130 nm CMOS Process”, Solid State Electronics Letters 2, pp.129–139, (2020). DOI: https://doi.org/10.1016/j.ssel.2020.12.004

[7]. Gilbert cell Mixer design in 65 nm CMOS technology.

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Published

06-12-2024

How to Cite

Phan Hồng Minh, Nguyễn Thị Thuỷ, and Nguyễn Trường Sơn. “Design and Calculate of Wide-Band Mixer Semiconductor on 130 Nm CMOS Technology”. Journal of Military Science and Technology, no. FEE, Dec. 2024, pp. 149-56, doi:10.54939/1859-1043.j.mst.FEE.2024.149-156.

Issue

Section

Electronics - Technical Physics